Datasheet > MMBF170LT1_08

MMBF170LT1_08

更新时间： 2024-01-22 06:42:01

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	78K
描述
Power MOSFET 500 mA, 60 V N-Channel SOT-23

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数据手册

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MMBF170LT1_08 数据手册

MMBF170LT1

Power MOSFET

500 mA, 60 V

N-Channel SOT-23

Features

http://onsemi.com

•ꢀPb-Free Packages are Available

500 mA, 60 V

MAXIMUM RATINGS

Rating

R_DS(on)= 5 W

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Drain-Gate Voltage

DSS

DGS

SOT-23

CASE 318

STYLE 21

Gate-Source Voltage

- Continuous

ꢁ20

ꢁ40

Vdc

Vpk

- Non-repetitive (t ≤ 50 ms)

GSM

Drain Current - Continuous

- Pulsed

0.5

0.8

Adc

N-Channel

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-ꢁ5 Board

(Note 1.) T = 25°C

Derate above 25°C

225

1.8

mW/°C

Thermal Resistance, Junction-to-Ambient

Junction and Storage Temperature

556

°C/W

°C

T , T

-ꢁ55 to

+150

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

MARKING DIAGRAM

& PIN ASSIGNMENT

1. FR-ꢁ5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

Drain

6Z MG

Gate 1

2 Source

= Specific Device Code

= Date Code

= Pb-Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the

package dimensions section on page 2 of this data sheet.

©ꢀ Semiconductor Components Industries, LLC, 2008

April, 2008 - Rev. 6

Publication Order Number:

MMBF170LT1/D

12 3 4 5

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