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MMBF170-7-F PDF预览

MMBF170-7-F

更新时间: 2024-11-16 04:14:59
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 71K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

MMBF170-7-F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:14 weeks
风险等级:0.79其他特性:HIGH RELIABILITY
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):0.5 A最大漏源导通电阻:5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):5 pF
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
功耗环境最大值:0.3 W认证状态:Not Qualified
参考标准:AEC-Q101表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MMBF170-7-F 数据手册

 浏览型号MMBF170-7-F的Datasheet PDF文件第2页浏览型号MMBF170-7-F的Datasheet PDF文件第3页浏览型号MMBF170-7-F的Datasheet PDF文件第4页 
SPICE MODELS: MMBF170  
MMBF170  
Lead-free Green  
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT  
TRANSISTOR  
Features  
·
·
·
·
·
·
Low On-Resistance  
A
SOT-23  
Low Gate Threshold Voltage  
Low Input Capacitance  
D
Dim  
A
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
Fast Switching Speed  
B
C
B
Low Input/Output Leakage  
Lead Free/RoHS Compliant (Note 2)  
TOP VIEW  
G
S
C
D
G
E
D
H
Mechanical Data  
·
·
E
K
Case: SOT-23  
M
G
H
J
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
L
J
Drain  
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
K
L
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
M
Gate  
a
·
·
·
Marking: (See Page 2) K6Z  
All Dimensions in mm  
Ordering & Date Code Information: See Page 2  
Weight: 0.008 grams (approximate)  
Source  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
VDSS  
MMBF170  
Units  
60  
60  
V
V
Drain-Source Voltage  
VDGR  
Drain-Gate Voltage RGS £ 1.0MW  
Gate-Source Voltage  
Continuous  
Pulsed  
±20  
±40  
VGSS  
ID  
V
500  
800  
Drain Current (Note 1)  
Continuous  
Pulsed  
mA  
300  
1.80  
mW  
mW/°C  
Pd  
Total Power Dissipation (Note 1)  
RqJA  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
417  
K/W  
Tj, TSTG  
-55 to +150  
°C  
Note: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,  
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
DS30104 Rev. 8 - 2  
1 of 4  
MMBF170  
www.diodes.com  
ã Diodes Incorporated  

MMBF170-7-F 替代型号

型号 品牌 替代类型 描述 数据表
DMG6968U-7 DIODES

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N-CHANNEL ENHANCEMENT MODE MOSFET
ZVP1320FTA DIODES

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200V P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN SOT23
ZVN3320FTA DIODES

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SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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