Datasheet > BSP296Q67000-S067

BSP296Q67000-S067

更新时间： 2024-09-14 23:35:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	120K
描述
TRANSISTOR MOSFET SMD SOT 223

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中文翻译

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数据手册

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BSP296Q67000-S067 数据手册

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BSP 296

SIPMOS Small-Signal Transistor

• N channel

• Enhancement mode

• Logic Level

• V

= 0.8...2.0V

GS(th)

Pin 1

Pin 2

Pin 3

Pin 4

Type

Package

Marking

V_DS

I_D

R_DS(on)

Ω

BSP 296

100 V

1 A

0.8

SOT-223

BSP 296

Type

Ordering Code

Tape and Reel Information

BSP 296

Q67000-S067

E6327

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain source voltage

Drain-gate voltage

100

DGR

Ω

= 20 k

100

Gate source voltage

ESD Sensitivity (HBM) as per MIL-STD 883

Continuous drain current

Class 1

T = 42 ˚C

DC drain current, pulsed

Dpuls

T = 25 ˚C

Power dissipation

tot

T = 25 ˚C

1.8

Data Sheet

05.99

12 3 4 5 6 7 8

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