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BSP297H6327 PDF预览

BSP297H6327

更新时间: 2024-11-24 21:21:51
品牌 Logo 应用领域
英飞凌 - INFINEON 脉冲光电二极管晶体管
页数 文件大小 规格书
8页 574K
描述
Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, SOT-223, 4 PIN

BSP297H6327 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOT-223包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.62其他特性:LOGIC LEVEL COMPATIBLE
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):0.66 A
最大漏极电流 (ID):0.66 A最大漏源导通电阻:1.8 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G4
JESD-609代码:e3元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.8 W最大脉冲漏极电流 (IDM):2.64 A
参考标准:AEC-Q101子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

BSP297H6327 数据手册

 浏览型号BSP297H6327的Datasheet PDF文件第2页浏览型号BSP297H6327的Datasheet PDF文件第3页浏览型号BSP297H6327的Datasheet PDF文件第4页浏览型号BSP297H6327的Datasheet PDF文件第5页浏览型号BSP297H6327的Datasheet PDF文件第6页浏览型号BSP297H6327的Datasheet PDF文件第7页 
Rev. 2.2  
BSP297  
SIPMOS Small-Signal-Transistor  
Product Summary  
Feature  
V
200  
1.8  
V
A
DS  
S N-Channel  
S Enhancement mode  
S Logic Level  
R
DS(on)  
I
0.66  
D
PG-SOT223  
S dv/dt rated  
Pb-free lead plating; RoHS compliant  
4
x Qualified according to AEC Q101  
Halogen­free according to IEC61249­2­21  
3
2
1
VPS05163  
Packaging  
Type  
Package  
Tape and Reel Information  
Marking  
PG-SOT223  
H6327: 1000 pcs/reel  
BSP297 Non dry  
BSP297  
Pb-free  
Yes  
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T =25°C  
0.66  
0.53  
2.64  
A
T =70°C  
A
Pulsed drain current  
I
D puls  
T =25°C  
A
6
kV/µs  
V
Reverse diode dv/dt  
dv/dt  
I =0.66A, V =160V, di/dt=200A/µs, T  
=150°C  
S
DS jmax  
Gate source voltage  
ESD (JESD22-A114-HBM)  
Power dissipation  
V
P
±20  
1B (>500V, <1000V)  
1.8  
GS  
tot  
W
T =25°C  
A
°C  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
T
,
T
-55... +150  
55/150/56  
j
stg  
Page 1  
2012  
-
11 29  
-

BSP297H6327 替代型号

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