Datasheet > BSP296NH6327

BSP296NH6327

更新时间： 2024-09-16 03:58:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	569K
描述
Power Field-Effect Transistor, 1.2A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

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数据手册

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BSP296NH6327 数据手册

BSP296N

OptiMOS^™Small-Signal-Transistor

Features

Product Summary

V_DS

100

0.6

0.8

1.2

• N-channel

R_DS(on),max

V_GS=10 V

• Enhancement mode

• Logic level (4.5V rated)

V_GS=4.5 V

I_D

• Avalanche rated

• Qualified according to AEC Q101

• 100% lead-free; RoHS compliant

• Halogen-free according to IEC61249-2-21

PG-SOT223

Type

Package

Tape and Reel Information

Marking

Halogen-Free

Packing

BSP296N

SOT223

H6327: 1000 pcs/ reel

BSP296N

Yes

Non dry

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _A=25 °C

T _A=70 °C

T _A=25 °C

Continuous drain current

1.2

0.9

4.6

I _D,pulse

Pulsed drain current

E _AS

I _D=1.2 A, R _GS=25 W

Avalanche energy, single pulse

15.0

I _D=1.2 A, V _DS=80 V,

di /dt =200 A/µs,

T _j,max=150 °C

Reverse diode dv /dt

dv /dt

kV/µs

V _GS

Gate source voltage

±20

P _tot

T _A=25 °C

1.8

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

ESD Class

-55 ... 150

0 (<250V)

260 °C

JESD22-A114 -HBM

Soldering Temperature

IEC climatic category; DIN IEC 68-1

55/150/56

Rev 2.0

page 1

2013-04-04

12 3 4 5 6 7...9

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