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BSP171PH6327XTSA1 PDF预览

BSP171PH6327XTSA1

更新时间: 2024-09-16 14:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网PC光电二极管晶体管
页数 文件大小 规格书
9页 618K
描述
Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

BSP171PH6327XTSA1 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:10 weeks
风险等级:1.6Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:737229
Samacsys Pin Count:4Samacsys Part Category:MOSFET (P-Channel)
Samacsys Package Category:SOT223 (4-Pin)Samacsys Footprint Name:SOT-223
Samacsys Released Date:2019-03-20 03:36:30Is Samacsys:N
其他特性:AVALANCHE RATED, LOGIC LEVEL COMPATIBLE外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):1.9 A最大漏极电流 (ID):1.9 A
最大漏源导通电阻:0.3 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):55 pFJESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1.8 W
参考标准:AEC-Q101子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

BSP171PH6327XTSA1 数据手册

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BSP171P  
SIPMOS® Small-Signal-Transistor  
Product Summary  
Features  
V DS  
-60  
V
A
• P-Channel  
R DS(on),max  
I D  
0.3  
• Enhancement mode  
-1.9  
• Logic level  
• Avalanche rated  
• dv /dt rated  
PG-SOT223  
• Pb-free lead plating; RoHS compliant  
• Qualified according to AEC Q101  
Halogen­free according to IEC61249­2­21  
Type  
BSP171P  
Package  
Tape and Reel Information  
Marking  
Packaging  
PG-SOT223  
H6327: 1000 pcs/reel  
BSP171P  
Non dry  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
steady state  
T A=25 °C1)  
T A=70 °C1)  
I D  
-1.9  
-1.5  
-7.6  
70  
Continuous drain current  
A
I D,pulse  
E AS  
T A=25 °C  
Pulsed drain current  
I D=-1.9 A, R GS=25  
I D=-1.9 A,  
Avalanche energy, single pulse  
mJ  
V
DS=-48 V,  
di /dt =-200 A/µs,  
j,max=150 °C  
-6  
Reverse diode dv /dt  
dv /dt  
kV/µs  
T
V GS  
±20  
1.8  
Gate source voltage  
V
T A=25 °C1)  
P tot  
Power dissipation  
W
°C  
T j, T stg  
-55 ... 150  
55/150/56  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
ESD Class; JESD22-A114-HBM  
Class 1a  
Rev 2.7  
page 1  
2012-11-26  

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