Datasheet > BSP19-Q

BSP19-Q

更新时间： 2024-03-03 10:09:55

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
7页	180K
描述
NPN high voltage transistorProduction

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BSP19-Q 数据手册

BSP19-Q

NPN high voltage transistor

12 July 2023

Product data sheet

1. General description

NPN high-voltage transistor in a SOT223 Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

Low current (max. 100 mA)

•

High voltage (max. 350 V)

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Switching and amplification

Especially used in telephony and automotive applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

350

I_C

collector current

DC current gain

100

h_FE

V_CE= 10 V; I_C= 20 mA; T_j= 25 °C

5. Pinning information

Table 2. Pinning information

Symbol

Description

base

Simplified outline

Graphic symbol

collector

emitter

collector

SC-73 (SOT223)

sym123

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

BSP19-Q

SC-73

plastic, surface-mounted package with increased heatsink; SOT223

4 leads; 2.3 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body

12 3 4 5 6 7

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