生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.76 |
Is Samacsys: | N | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 0.35 A | 最大漏源导通电阻: | 6 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 12 pF |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 0.7 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 25 ns | 最大开启时间(吨): | 8 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSP206-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 0.35 A, 60 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
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BSP206TRL | NXP |
获取价格 |
TRANSISTOR 0.3 A, 60 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
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BSP206TRL | YAGEO |
获取价格 |
Power Field-Effect Transistor, 0.3A I(D), 60V, 6ohm, 1-Element, P-Channel, Silicon, Metal- |
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BSP206TRL13 | NXP |
获取价格 |
TRANSISTOR 0.3 A, 60 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
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BSP20A | KEXIN |
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NPN Silicon Epitaxial Transistor |
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BSP20A | TYSEMI |
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High Voltage: V(BR)CEO of 250 and 350 Volts. Available in 12 mm Tape and Reel |
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BSP20AT1 | MOTOROLA |
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SOT.223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT |
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BSP20FA5 | CIT |
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CIT SWITCH |
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BSP20FB | CIT |
获取价格 |
CIT SWITCH |
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BSP20FC | CIT |
获取价格 |
CIT SWITCH |
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