Datasheet > BSP20A

BSP20A

更新时间： 2024-10-01 06:44:23

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关光电二极管
页数	文件大小	规格书
1页	40K
描述
NPN Silicon Epitaxial Transistor

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中文翻译

获取价格

数据手册

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BSP20A 数据手册

SMD Type

Transistors

NPN Silicon Epitaxial Transistor

BSP20A

SOT-223

Unit: mm

+0.2

3.50

-0.2

+0.2

6.50

-0.2

Features

+0.2

0.90

-0.2

+0.1

3.00

-0.1

High Voltage: V(BR)CEO of 250 and 350 Volts.

Available in 12 mm Tape and Reel

+0.3

7.00

-0.3

1 Base

2 Collector

+0.1

0.70

-0.1

3 Emitter

2.9

4.6

4 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Emitter Voltage (Open Base)

Collector-Base Voltage (Open Emitter)

Emitter-Base Voltage (Open Collector)

Collector Current (DC)

Symbol

V^CEO

V^CBO

V^EBO

I^C

Rating

250

Unit

300

1000

0.8

Watts

mW/

Total Power Dissipation @ TA = 25

Derate above 25

P^D

6.4

Storage Temperature Range

Junction Temperature

Tstg

-65 to 150

150

Thermal Resistance from Junction-to-Ambient

Maximum Temperature for Soldering Purposes

Time in Solder Bath

RèJA

156

260

Sec

* Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint.

Electrical Characteristics Ta = 25

Parameter

Symbol

V^(BR)CEO

I^CBO

Testconditons

IC = 1.0 mA, IB = 0

Min

250

Typ

Max

Unit

Collector-Emitter Breakdown Voltage

Collector-Base Cutoff Current

Emitter-Base Cutoff Current

VCB = 400 V, IE = 0

I^EBO

VEB = 5.0 V, IC = 0

DC Current Gain *

h^FE

IC = 20 mA, VCE = 10 V

IC = 10 mA, VCE = 10 V, f = 5.0 MHz

IC = 50 mA, IB = 4.0 mA

Current-Gain — Bandwidth Product *

Collector-Emitter Saturation Voltage *

Base-Emitter Saturation Voltage *

f^T

MHz

V^CE(sat)

V^BE(sat)

0.5

1.3

* Pulse Test: Pulse Width

300 ìs, Duty Cycle = 2.0%

Marking

SP20A

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