是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.69 | Is Samacsys: | N |
配置: | Single | 最大漏极电流 (Abs) (ID): | 0.25 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-609代码: | e0 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 1 W |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSP204A | NXP |
获取价格 |
P-channel enhancement mode vertical D-MOS transistor |
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BSP205 | NXP |
获取价格 |
P-channel enhancement mode vertical D-MOS transistor |
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BSP205135 | NXP |
获取价格 |
TRANSISTOR 275 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Si |
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BSP205-T | NXP |
获取价格 |
TRANSISTOR 0.275 A, 60 V, 10 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
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BSP205T/R | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 275MA I(D) | SOT-223 |
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BSP205-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 0.275 A, 60 V, 10 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
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BSP205-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 0.275 A, 60 V, 10 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
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BSP205TRL | NXP |
获取价格 |
TRANSISTOR 0.25 A, 50 V, 10 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
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BSP205TRL13 | YAGEO |
获取价格 |
Power Field-Effect Transistor, 0.25A I(D), 50V, 10ohm, 1-Element, P-Channel, Silicon, Meta |
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BSP206 | NXP |
获取价格 |
P-channel enhancement mode vertical D-MOS transistor |
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