Datasheet > BSP179H6327

BSP179H6327

更新时间： 2024-11-21 20:10:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	409K
描述
Power Field-Effect Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BSP179H6327 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.83
Base Number Matches：	1

BSP179H6327 数据手册

BSP179

SIPMOS^®Small-Signal-Transistor

Product Summary

V_DS

Features

400

• N-channel

R_DS(on),max

I_DSS,min

• Depletion mode

• dv /dt rated

• Available with V _GS(th)indicator on reel

• Pb-free lead plating; RoHS compliant

• Qualified according to AEC Q101

PG-SOT223

• Halogen-free according to IEC61249-2-21

9.18

13.14

24.96

Halogen-

Type

Package

Tape and Reel

Marking

BSP179

Packaging

Non dry

PG-SOT223

BSP179

H6327: 1000 pcs/reel

Yes

PG-SOT223

BSP179

H6906: 1000 pcs/reel

sorted in V_GS(th)bands¹⁾

Non dry

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _A=25 °C

T _A=70 °C

T _A=25 °C

Continuous drain current

0.21

0.17

0.83

I _D,pulse

dv /dt

V _GS

Pulsed drain current

Reverse diode dv /dt

Gate source voltage

I _D=0.21 A, V _DS=20 V,

di /dt =200 A/µs,

T _j,max=150 °C

kV/µs

±20

ESD sensitivity (HBM) as per

JESD-A114-HBM

1A (>250V, <500V)

P _tot

T _A=25 °C

Power dissipation

1.8

T _j, T _stg

Operating and storage temperature

-55 ... 150

55/150/56

°C

IEC climatic category; DIN IEC 68-1

¹⁾see table on next page and diagram 11

Rev. 2.0

page 1

2015-06-23

12 3 4 5 6 7 8

中文翻译

下载PDF

与BSP179H6327相关器件

型号	品牌	获取价格	描述	数据表
BSP179H6906	INFINEON	获取价格	SIPMOSÂ® Small-Signal-Transistor
BSP17E6327	INFINEON	获取价格	Power Field-Effect Transistor, 3.2A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta
BSP17Q67000-S220	ETC	获取价格	TRANSISTOR MOSFET SMD SOT 223 N KANAL
BSP19	NEXPERIA	获取价格	NPN high-voltage transistorsProduction
BSP19	NXP	获取价格	NPN high-voltage transistors
BSP19	ZETEX	获取价格	NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR
BSP19	YAGEO	获取价格	Small Signal Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon
BSP19,115	NXP	获取价格	BSP19_20 - NPN high-voltage transistors SC-73 4-Pin
BSP192	YAGEO	获取价格	Small Signal Field-Effect Transistor, 0.15A I(D), 200V, 1-Element, P-Channel, Silicon, Met
BSP192E-6327	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.15A I(D), 240V, 1-Element, P-Channel, Silicon, Met