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BSP19A

更新时间: 2024-11-20 12:53:47
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TYSEMI /
页数 文件大小 规格书
1页 143K
描述
High Voltage: V(BR)CEO of 250 and 350 Volts. Available in 12 mm Tape and Reel

BSP19A 数据手册

  
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Product specification  
BSP19A  
SOT-223  
Unit: mm  
+0.2  
3.50  
-0.2  
+0.2  
6.50  
-0.2  
Features  
+0.2  
0.90  
-0.2  
+0.1  
3.00  
-0.1  
+0.3  
7.00  
-0.3  
High Voltage: V(BR)CEO of 250 and 350 Volts.  
Available in 12 mm Tape and Reel  
4
1 Base  
2 Collector  
1
2
3
+0.1  
0.70  
-0.1  
3 Emitter  
2.9  
4.6  
4 Collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-Emitter Voltage (Open Base)  
Collector-Base Voltage (Open Emitter)  
Emitter-Base Voltage (Open Collector)  
Collector Current (DC)  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
350  
Unit  
V
400  
V
5
V
1000  
0.8  
mA  
Watts  
mW/  
Total Power Dissipation @ TA = 25  
Derate above 25  
*
PD  
6.4  
Storage Temperature Range  
Junction Temperature  
Tstg  
TJ  
-65 to 150  
150  
Thermal Resistance from Junction-to-Ambient  
Maximum Temperature for Soldering Purposes  
Time in Solder Bath  
RèJA  
156  
/W  
260  
TL  
10  
Sec  
* Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint.  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
V(BR)CEO  
ICBO  
Testconditons  
IC = 1.0 mA, IB = 0  
Min  
350  
Typ  
Max  
Unit  
V
Collector-Emitter Breakdown Voltage  
Collector-Base Cutoff Current  
Emitter-Base Cutoff Current  
VCB = 400 V, IE = 0  
20  
10  
nA  
mA  
IEBO  
VEB = 5.0 V, IC = 0  
DC Current Gain *  
hFE  
IC = 20 mA, VCE = 10 V  
IC = 10 mA, VCE = 10 V, f = 5.0 MHz  
IC = 50 mA, IB = 4.0 mA  
IC = 50 mA, IB = 4.0 mA  
40  
70  
Current-Gain — Bandwidth Product *  
Collector-Emitter Saturation Voltage *  
Base-Emitter Saturation Voltage *  
fT  
MHz  
V
VCE(sat)  
VBE(sat)  
0.5  
1.3  
V
* Pulse Test: Pulse Width  
300 ìs, Duty Cycle = 2.0%  
Marking  
Marking  
SP19A  
1of 1  
http://www.twtysemi.com  
sales@twtysemi.com  
4008-318-123  

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