5秒后页面跳转
BSP19AT3 PDF预览

BSP19AT3

更新时间: 2024-11-20 19:16:23
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 开关光电二极管晶体管
页数 文件大小 规格书
6页 83K
描述
1000mA, 350V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261AA

BSP19AT3 技术参数

生命周期:TransferredReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.69外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:350 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-261AAJESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):70 MHz
VCEsat-Max:0.5 VBase Number Matches:1

BSP19AT3 数据手册

 浏览型号BSP19AT3的Datasheet PDF文件第2页浏览型号BSP19AT3的Datasheet PDF文件第3页浏览型号BSP19AT3的Datasheet PDF文件第4页浏览型号BSP19AT3的Datasheet PDF文件第5页浏览型号BSP19AT3的Datasheet PDF文件第6页 
Order this document  
by BSP19AT1/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
This family of NPN Silicon Epitaxial transistors is designed for use as a general  
purpose amplifier and in switching applications. The device is housed in the SOT-223  
package which is designed for medium power surface mount applications.  
SOT–223 PACKAGE  
NPN SILICON  
HIGH VOLTAGE  
TRANSISTOR  
High Voltage: V  
of 250 and 350 Volts.  
(BR)CEO  
The SOT-223 package can be soldered using wave or reflow.  
SOT-223 package ensures level mounting, resulting in improved thermal  
conduction, and allows visual inspection of soldered joints. The formed  
leads absorb thermal stress during soldering, eliminating the possibility of  
damage to the die  
SURFACE MOUNT  
Available in 12 mm Tape and Reel  
T1 Configuration – 7 inch/1000 unit reel  
T3 Configuration – 13 inch/4000 unit reel  
COLLECTOR 2,4  
4
1
2
3
BASE  
1
PNP Complement is BSP16T1  
CASE 318E-04, STYLE 1  
TO-261AA  
EMITTER 3  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Collector-Emitter Voltage (Open Base)  
Collector-Base Voltage (Open Emitter)  
Emitter-Base Voltage (Open Collector)  
Collector Current (DC)  
Symbol  
Value  
350  
Unit  
V
CEO  
V
CBO  
V
EBO  
Vdc  
Vdc  
400  
5.0  
Vdc  
I
C
1000  
mAdc  
(1)  
Total Power Dissipation @ T = 25°C  
P
0.8  
6.4  
Watts  
mW/°C  
A
D
Derate above 25°C  
Storage Temperature Range  
Junction Temperature  
DEVICE MARKING  
SP19A  
T
stg  
65 to 150  
150  
°C  
°C  
T
J
THERMAL CHARACTERISTICS  
Characteristic  
Thermal Resistance from Junction-to-Ambient  
Symbol  
Max  
Unit  
R
156  
°C/W  
θJA  
Maximum Temperature for Soldering Purposes  
Time in Solder Bath  
T
L
260  
10  
°C  
Sec  
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint.  
Thermal Clad is a trademark of the Bergquist Company  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 2  
Motorola, Inc. 1997  

与BSP19AT3相关器件

型号 品牌 获取价格 描述 数据表
BSP19-Q NEXPERIA

获取价格

NPN high voltage transistorProduction
BSP19-T NXP

获取价格

TRANSISTOR 1 A, 350 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
BSP19T/R ETC

获取价格

TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 1A I(C) | SOT-223
BSP19TA ZETEX

获取价格

Power Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy
BSP19TA DIODES

获取价格

Power Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy
BSP19-TAPE-13 NXP

获取价格

TRANSISTOR 1 A, 350 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
BSP19-TAPE-7 NXP

获取价格

TRANSISTOR 1 A, 350 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
BSP19TC ZETEX

获取价格

Power Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy
BSP19TRL NXP

获取价格

TRANSISTOR 1000 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sig
BSP19TRL13 YAGEO

获取价格

Small Signal Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon