生命周期: | Transferred | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.69 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 350 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 40 |
JEDEC-95代码: | TO-261AA | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 70 MHz |
VCEsat-Max: | 0.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSP19-Q | NEXPERIA |
获取价格 |
NPN high voltage transistorProduction | |
BSP19-T | NXP |
获取价格 |
TRANSISTOR 1 A, 350 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BSP19T/R | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 1A I(C) | SOT-223 | |
BSP19TA | ZETEX |
获取价格 |
Power Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy | |
BSP19TA | DIODES |
获取价格 |
Power Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy | |
BSP19-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 1 A, 350 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BSP19-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 1 A, 350 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BSP19TC | ZETEX |
获取价格 |
Power Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy | |
BSP19TRL | NXP |
获取价格 |
TRANSISTOR 1000 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sig | |
BSP19TRL13 | YAGEO |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon |