Datasheet > BSP19

BSP19

更新时间： 2024-11-20 22:48:31

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描述
NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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BSP19 数据手册

SOT223 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 3 FEBRUARY 1996

BSP19

FEATURES

High V_CEO 350V

Low saturation voltage

COMPLEMENTARY TYPE

PARTMARKING DETAIL

BSP16

BSP19

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

400

350

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T_amb=25°C

I_C

0.5

P_tot

°C

Operating and Storage Temperature

Range

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN.

V_(BR)CBO400

TYP.

MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

I_C=100µA

I_C=10mA*

I_E=100µA

V_CB=300V

V_EB=3V

Collector-Emitter

Breakdown Voltage

V_(BR)CEO

V_(BR)EBO

I_CBO

350

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off Current I_EBO

0.1

0.5

µA

Collector-Emitter

Saturation Voltage

V_CE(sat)

I_C=50mA, I_B=4mA*

Base-Emitter

Saturation Voltage

V_BE(sat)

1.3

I_C=50mA, I_B=4mA*

Static Forward Current h_FE

Transfer Ratio

I_C=20mA, V_CE=5V*

I_C=100mA, V_CE=5V*

Transition Frequency

f_T

MHz

I_C=10mA, V_CE=10V

f = 20MHz

Output Capacitance

C_obo

V_CB=20V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

For typical characteristics graphs see FZT658 datasheet.

3 - 60

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