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AUIRFU4104

更新时间： 2024-11-25 06:38:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
14页 307K
描述
HEXFET® Power MOSFET

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中文翻译

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AUIRFU4104 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：IPAK-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：8
Is Samacsys：N其他特性：AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）：310 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：40 V
最大漏极电流 (Abs) (ID)：42 A最大漏极电流 (ID)：42 A
最大漏源导通电阻：0.0055 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-251AAJESD-30 代码：R-PSIP-T3
湿度敏感等级：1元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：140 W最大脉冲漏极电流 (IDM)：480 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRFU4104 数据手册

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PD - 97452  
AUIRFR4104  
AUTOMOTIVE GRADE  
AUIRFU4104  
HEXFET® Power MOSFET  
Features  
Advanced Process Technology  
D
S
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
Automotive Qualified *  
V(BR)DSS  
40V  
5.5m  
RDS(on) max.  
ID (Silicon Limited)  
ID (Package Limited)  
Ω
G
119A  
42A  
Description  
D
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniques to achieve extremely low on-resistance per  
silicon area. Additional features of this design are a  
175°C junction operating temperature, fast switching  
speed and improved repetitive avalanche rating . These  
features combine to make this design an extremely  
efficient and reliable device for use in Automotive appli-  
cations and a wide variety of other applications.  
S
S
D
G
G
D-Pak  
AUIRFR4104  
I-Pak  
AUIRFU4104  
G
Gate  
D
S
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
119  
Parameter  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
Units  
I
I
I
I
@ T = 25°C  
C
D
D
D
84  
A
@ T = 100°C  
C
42  
@ T = 25°C  
C
480  
DM  
140  
P
@T = 25°C Power Dissipation  
W
W/°C  
V
D
C
0.95  
Linear Derating Factor  
± 20  
V
Gate-to-Source Voltage  
GS  
EAS  
AS (tested )  
145  
310  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
E
IAR  
See Fig.12a, 12b, 15, 16  
A
EAR  
Repetitive Avalanche Energy  
mJ  
-55 to + 175  
T
T
Operating Junction and  
J
Storage Temperature Range  
°C  
STG  
300  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Mounting Torque, 6-32 or M3 screw  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.05  
40  
Units  
Rθ  
JC  
Rθ  
JA  
Rθ  
JA  
Junction-to-Case  
Junction-to-Ambient (PCB mount)  
Junction-to-Ambient  
°C/W  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
02/10/2010  
1234567...14

中文翻译

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AUIRFU4104 替代型号

型号 品牌 替代类型 描述 数据表
IRFU4104PBF INFINEON

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 HEXFET㈢ Power MOSFET ( VDSS = 40V , RDS(on) =

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