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AUIRFU4292

更新时间： 2024-02-14 10:35:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
14页 262K
描述
Advanced Process Technology

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中文翻译

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AUIRFU4292 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：,Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：26 weeks
风险等级：5.37配置：Single
最大漏极电流 (Abs) (ID)：9.3 AFET 技术：METAL-OXIDE SEMICONDUCTOR
湿度敏感等级：1最高工作温度：175 °C
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：100 W子类别：FET General Purpose Power
表面贴装：NO处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

AUIRFU4292 数据手册

 浏览型号AUIRFU4292的Datasheet PDF文件第2页浏览型号AUIRFU4292的Datasheet PDF文件第3页浏览型号AUIRFU4292的Datasheet PDF文件第4页浏览型号AUIRFU4292的Datasheet PDF文件第5页浏览型号AUIRFU4292的Datasheet PDF文件第6页浏览型号AUIRFU4292的Datasheet PDF文件第7页 
PD - 97792  
AUTOMOTIVE GRADE  
AUIRFR4292  
AUIRFU4292  
Features  
HEXFET® Power MOSFET  
●
●
●
●
●
●
●
Advanced Process Technology  
D
LowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
V(BR)DSS  
RDS(on) typ.  
max.  
250V  
275m  
345m  
G
S
ID  
9.3A  
Automotive Qualified *  
Description  
D
SpecificallydesignedforAutomotiveapplications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low  
on-resistancepersiliconarea. Additionalfeatures  
of this design are a 175°C junction operating  
temperature, fast switching speed and improved  
repetitiveavalancherating. Thesefeaturescom-  
bine to make this design an extremely efficient  
andreliabledeviceforuseinAutomotiveapplica-  
tions and a wide variety of other applications.  
S
S
D
G
G
I-Pak  
AUIRFU4292  
D-Pak  
AUIRFR4292  
G
Gate  
D
Drain  
S
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
9.3  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
6.6  
A
40  
PD @TC = 25°C  
Power Dissipation  
100  
0.67  
± 20  
W
W/°C  
V
Linear Derating Factor  
VGS  
EAS  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally Limited)  
130  
mJ  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
E
AS (tested )  
97  
IAR  
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
EAR  
TJ  
mJ  
Operating Junction and  
-55 to + 175  
300  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.5  
Units  
R  
R  
R  
Junction-to-Case  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
°C/W  
JC  
JA  
JA  
50  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
06/18/12  
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