Datasheet > AUIRFZ34N

AUIRFZ34N

更新时间： 2023-12-06 20:09:06

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	263K
描述
汽车Q101 55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

AUIRFZ34N 数据手册

PD - 97621

AUTOMOTIVE GRADE

AUIRFZ34N

Features

HEXFET^®Power MOSFET

l AdvancedPlanarTechnology

l LowOn-Resistance

l Dynamic dV/dT Rating

l 175°COperatingTemperature

l Fast Switching

l Fully Avalanche Rated

l Repetitive Avalanche Allowed up

to Tjmax

V_(BR)DSS

R_DS(on)max.

I_D

55V

0.040

Ω

29A

l Lead-Free,RoHSCompliant

l AutomotiveQualified*

Description

Specifically designed for Automotive applications,

this cellular design of HEXFET® Power MOSFETs

utilizes the latest processing techniques to achieve

low on-resistance per silicon area. This benefit

combined with the fast switching speed and

ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in Automotive and a wide variety of other applications.

TO-220AB

AUIRFZ34N

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Max.

Parameter

Units

Continuous Drain Current, V_GS@ 10V

@ T = 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 100°C

100

Power Dissipation

@T = 25°C

W/°C

0.45

± 20

Linear Derating Factor

Gate-to-Source Voltage

E_AS

I_AR

Single Pulse Avalanche Energy (Thermally Limited)

6.8

Avalanche Current

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

5.0

V/ns

-55 to + 175

Storage Temperature Range

°C

STG

300

Soldering Temperature, for 10 seconds (1.6mm from case )

Mounting Torque, 6-32 or M3 screw

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

2.2

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

01/12/11

12 3 4 5 6 7...11

中文翻译

下载PDF

AUIRFZ34N 替代型号

型号	品牌	替代类型	描述	数据表
IRFZ34NPBF	INFINEON	类似代替	HEXFET Power MOSFET
IRFZ34N	INFINEON	功能相似	Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)

与AUIRFZ34N相关器件

型号	品牌	获取价格	描述	数据表
AUIRFZ44N	INFINEON	获取价格	Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Me
AUIRFZ44NL	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRFZ44NS	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRFZ44NSTRL	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRFZ44NSTRR	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRFZ44VZS	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRFZ44VZSTRL	INFINEON	获取价格	Power Field-Effect Transistor, 57A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
AUIRFZ44VZSTRR	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRFZ44Z	INFINEON	获取价格	HEXFET? Power MOSFET
AUIRFZ44ZS	INFINEON	获取价格	HEXFET? Power MOSFET

与AUIRFZ34N相关文章

Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

17
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

34
解读L9904TR手册资料：产品概述、主要功能、电气参数
2024-08-20

33
芯片底部填充工艺：提升电子设备可靠性的关键步骤
2024-08-14

93

产品中心

服务支持

精选活动

关于我们

帮助中心

AUIRFZ34N

AUIRFZ34N 数据手册

AUIRFZ34N 替代型号

与AUIRFZ34N相关器件

与AUIRFZ34N相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AUIRFZ34N

AUIRFZ34N 数据手册

AUIRFZ34N 替代型号

与AUIRFZ34N相关器件

与AUIRFZ34N相关文章

您还可以找

您在本页遇到什么问题？