AUIRFR8405
AUIRFU8405
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
Advanced Process Technology
VDSS
40V
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
RDS(on) typ.
max.
1.65mΩ
1.98m
211A
Ω
ID
(Silicon Limited)
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These features
combine to make this design an extremely efficient and reliable device
foruseinAutomotiveapplicationsandwidevarietyofotherapplications.
ID
100A
(Package Limited)
D
S
D
D
S
S
G
D
G
Applications
G
l
l
l
l
l
Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
DC-DC Converter
D-Pak
AUIRFR8405
I-Pak
AUIRFU8405
G
Gate
D
Drain
S
Source
Ordering Information
Base part
Package Type
Standard Pack
Form
Tube
Complete Part Number
Quantity
75
2000
3000
3000
AUIRFR8405
DPak
AUIRFR8405
AUIRFR8405TR
AUIRFR8405TRL
AUIRFR8405TRR
AUIRFU8405
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
AUIRFU8405
IPak
75
AbsoluteMaximumRatings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional
operationofthedeviceattheseoranyotherconditionbeyondthoseindicatedinthespecificationsisnotimplied. Exposuretoabsolute-maximum-ratedconditions
for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Parameter
Max.
211
Units
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
150
A
100
804
163
PD @TC = 25°C
Maximum Power Dissipation
W
W/°C
V
1.1
Linear Derating Factor
± 20
VGS
TJ
Gate-to-Source Voltage
-55 to + 175
Operating Junction and
°C
TSTG
Storage Temperature Range
300
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
208
256
EAS (Thermally limited)
Single Pulse Avalanche Energy
mJ
EAS (tested)
IAR
Single Pulse Avalanche Energy Tested Value
See Fig. 14, 15, 24a, 24b
A
Avalanche Current
EAR
mJ
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Typ.
–––
–––
–––
Max.
0.92
50
Units
Rθ
Rθ
Rθ
Junction-to-Case
JC
JA
JA
°C/W
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
110
HEXFET® isaregisteredtrademarkofInternationalRectifier.
*Qualificationstandardscanbefoundathttp://www.irf.com/
1
www.irf.com
© 2013 International Rectifier
April 30, 2013