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AUIRFU9024N

更新时间： 2024-01-19 18:53:42
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
11页 529K
描述
Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, IPAK-3

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AUIRFU9024N 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC, IPAK-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.23
其他特性：AVALANCHE RATED, HIGH RELIABILITY雪崩能效等级（Eas）：62 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：55 V最大漏极电流 (Abs) (ID)：11 A
最大漏极电流 (ID)：11 A最大漏源导通电阻：0.175 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-251AA
JESD-30 代码：R-PSIP-T3JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：260极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：38 W最大脉冲漏极电流 (IDM)：44 A
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：MATTE TIN OVER NICKEL
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRFU9024N 数据手册

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AUIRFR9024N  
AUIRFU9024N  
AUTOMOTIVE GRADE  
Features  
HEXFET® Power MOSFET  
Advanced Planar Technology  
Low On-Resistance  
P-Channel  
Dynamic dv/dt Rating  
150°C Operating Temperature  
Fast Switching  
VDSS  
RDS(on)  
ID  
-55V  
max.  
0.175  
-11A  
Fully Avalanche Rated  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
D
D
S
S
Description  
D
G
G
Specifically designed for Automotive applications, this Cellular  
design of HEXFET® Power MOSFETs utilizes the latest  
processing techniques to achieve low on-resistance per silicon  
area. This benefit combined with the fast switching speed and  
ruggedized device design that HEXFET power MOSFETs are  
well known for, provides the designer with an extremely efficient  
and reliable device for use in Automotive and a wide variety of  
other applications.  
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Form  
Tube  
Base part number  
AUIRFU9024N  
AUIRFR9024N  
Package Type  
I-Pak  
Orderable Part Number  
Quantity  
75  
75  
3000  
AUIRFU9024N  
AUIRFR9024N  
AUIRFR9024NTRL  
Tube  
Tape and Reel Left  
D-Pak  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance  
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless  
otherwise specified.  
Symbol  
ID @ TC = 25°C  
Parameter  
Continuous Drain Current, VGS @ -10V  
Max.  
-11  
Units  
A
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current  
-8  
-44  
38  
PD @TC = 25°C  
Maximum Power Dissipation  
Linear Derating Factor  
W
0.30  
W/°C  
V
mJ  
A
VGS  
EAS  
Gate-to-Source Voltage  
± 20  
62  
Single Pulse Avalanche Energy (Thermally Limited)   
IAR  
Avalanche Current   
-6.6  
3.8  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt  
Operating Junction and  
mJ  
V/ns  
-10  
-55 to + 150  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 seconds (1.6mm from case)  
300  
Thermal Resistance  
Symbol  
Parameter  
Junction-to-Case  
Typ.  
–––  
–––  
–––  
Max.  
3.3  
Units  
RJC  
RJA  
RJA  
Junction-to-Ambient ( PCB Mount)   
Junction-to-Ambient  
50  
°C/W  
110  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2015-10-20  
1234567...11

中文翻译

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AUIRFU9024N 替代型号

型号 品牌 替代类型 描述 数据表
IRFU9024N INFINEON

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 Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A)

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