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AUIRFZ24NSTRR

更新时间： 2024-01-27 08:50:30

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	235K
描述
Advanced Planar Technology Low On-Resistance

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中文翻译

获取价格

数据手册
替代型号

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AUIRFZ24NSTRR 数据手册

PD - 96377

AUTOMOTIVE GRADE

AUIRFZ24NS

AUIRFZ24NL

Features

AdvancedPlanarTechnology

LowOn-Resistance

Dynamic dV/dT Rating

175°COperatingTemperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

HEXFET^®Power MOSFET

V_(BR)DSS

55V

0.07

R_DS(on)max.

I_D

17A

Automotive Qualified *

Description

Specifically designed for Automotive applications, this

Cellular design of HEXFET® Power MOSFETs utilizes

the latest processing techniques to achieve low on-

resistancepersiliconarea.Thisbenefitcombinedwiththe

fast switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in Automotive and a wide variety of other

applications.

D²Pak

TO-262

AUIRFZ24NS AUIRFZ24NL

Gate

Drain

Source

Absolute Maximum Ratings

Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated

in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect

device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still

air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

Units

@ T = 25°C

@ T = 100°C

3.8

@T = 25°C

Power Dissipation

@T = 25°C

0.3

Linear Derating Factor

W/°C

± 20

Gate-to-Source Voltage

E_AS

I_AR

Single Pulse Avalanche Energy

Avalanche Current

4.5

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

6.8

V/ns

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

STG

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

3.3

Units

R_θJC

R_θJA

Junction-to-Case

Junction-to-Ambient (PCB mounted, steady-state)

°C/W

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

06/22/11

12 3 4 5 6 7...13

中文翻译

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AUIRFZ24NSTRR 替代型号

型号	品牌	替代类型	描述	数据表
AUIRFZ24NSTRL	INFINEON	类似代替	Advanced Planar Technology Low On-Resistance
AUIRFZ24NS	INFINEON	类似代替	Advanced Planar Technology Low On-Resistance
IRFZ24NSTRLPBF	INFINEON	功能相似	Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta

与AUIRFZ24NSTRR相关器件

型号	品牌	获取价格	描述	数据表
AUIRFZ34N	INFINEON	获取价格	汽车Q101 55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO
AUIRFZ44N	INFINEON	获取价格	Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Me
AUIRFZ44NL	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRFZ44NS	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRFZ44NSTRL	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRFZ44NSTRR	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRFZ44VZS	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRFZ44VZSTRL	INFINEON	获取价格	Power Field-Effect Transistor, 57A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
AUIRFZ44VZSTRR	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRFZ44Z	INFINEON	获取价格	HEXFET? Power MOSFET

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