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AUIRFU8403

更新时间： 2024-02-06 00:37:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 285K
描述
Advanced Process Technology, New Ultra Low On-Resistance

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中文翻译

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AUIRFU8403 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：16 weeks风险等级：1.73
配置：Single最大漏极电流 (Abs) (ID)：100 A
FET 技术：METAL-OXIDE SEMICONDUCTOR湿度敏感等级：1
最高工作温度：175 °C峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：99 W
子类别：FET General Purpose Power表面贴装：NO
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

AUIRFU8403 数据手册

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AUIRFR8403  
AUIRFU8403  
AUTOMOTIVE GRADE  
HEXFET® Power MOSFET  
Features  
l
l
l
l
l
l
l
Advanced Process Technology  
D
S
VDSS  
40V  
New Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
RDS(on) typ.  
max.  
2.4m  
3.1m  
Ω
Ω
G
ID  
127A  
100A  
(Silicon Limited)  
Description  
ID  
(Package Limited)  
Specifically designed for Automotive applications, this HEXFET®  
Power MOSFET utilizes the latest processing techniques to achieve  
extremely low on-resistance per silicon area. Additional features of  
this design are a 175°C junction operating temperature, fast switching  
speed and improved repetitive avalanche rating. These features  
combine to make this design an extremely efficient and reliable device  
foruseinAutomotiveapplicationsandwidevarietyofotherapplications.  
D
D
S
S
D
G
G
Applications  
D-Pak  
I-Pak  
AUIRFU8403  
l
l
l
l
l
Electric Power Steering (EPS)  
Battery Switch  
Start/Stop Micro Hybrid  
Heavy Loads  
DC-DC Converter  
AUIRFR8403  
G
D
S
Gate  
Drain  
Source  
Ordering Information  
Base part number  
Package Type  
Standard Pack  
Complete Part Number  
Form  
Tube  
Tape and Reel  
Tape and Reel Left  
Tape and Reel Right  
Tube  
Quantity  
AUIRFR8403  
DPak  
75  
AUIRFR8403  
AUIRFR8403TR  
AUIRFR8403TRL  
AUIRFR8403TRR  
AUIRFU8403  
2000  
3000  
3000  
75  
AUIRFU8403  
IPak  
AbsoluteMaximumRatings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional  
operationofthedeviceattheseoranyotherconditionbeyondthoseindicatedinthespecificationsisnotimplied. Exposuretoabsolute-maximum-ratedconditions  
for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air  
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Symbol  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Parameter  
Max.  
127  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
90  
A
100  
520  
99  
PD @TC = 25°C  
Maximum Power Dissipation  
W
W/°C  
V
0.66  
Linear Derating Factor  
± 20  
VGS  
TJ  
Gate-to-Source Voltage  
-55 to + 175  
Operating Junction and  
°C  
TSTG  
Storage Temperature Range  
300  
Soldering Temperature, for 10 seconds (1.6mm from case)  
Avalanche Characteristics  
EAS (Thermally limited) Single Pulse Avalanche Energy  
114  
148  
mJ  
EAS (tested)  
IAR  
Single Pulse Avalanche Energy Tested Value  
See Fig. 14, 15, 24a, 24b  
Avalanche Current  
A
EAR  
Repetitive Avalanche Energy  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.52  
50  
Units  
Rθ  
JC  
Rθ  
JA  
Rθ  
JA  
Junction-to-Case  
°C/W  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
110  
HEXFET®isaregisteredtrademarkofInternationalRectifier.  
*Qualificationstandardscanbefoundathttp://www.irf.com/  
1
www.irf.com  
© 2013 International Rectifier  
April 25, 2013  
1234567...13

中文翻译

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