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AUIRFU8401

更新时间： 2024-02-28 17:18:16
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
14页 458K
描述
Advanced Process Technology New Ultra Low On-Resistance

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中文翻译

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AUIRFU8401 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：26 weeks风险等级：1.73
配置：Single最大漏极电流 (Abs) (ID)：100 A
FET 技术：METAL-OXIDE SEMICONDUCTOR湿度敏感等级：1
最高工作温度：175 °C峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：79 W
子类别：FET General Purpose Power表面贴装：NO
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

AUIRFU8401 数据手册

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AUIRFR8401  
AUIRFU8401  
AUTOMOTIVE GRADE  
HEXFET® Power MOSFET  
Features  
VDSS  
40V  
Advanced Process Technology  
New Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
RDS(on) typ.  
3.2m  
4.25m  
100A  
max  
ID (Silicon Limited)  
ID (Package Limited)  
100A  
Description  
Specifically designed for Automotive applications, this HEXFET® Power  
MOSFETs utilizes the latest processing techniques to achieve low on-  
resistance per silicon area. This benefit combined with the fast switching  
speed and ruggedized device design that HEXFET power MOSFETs are  
well known for, provides the designer with an extremely efficient and reliable  
device for use in Automotive and a wide variety of other applications.  
I-Pak  
AUIRFU8401  
D-Pak  
AUIRFR8401  
Applications  
G
D
S
Electric Power Steering (EPS)  
Battery Switch  
Gate  
Drain  
Source  
Start /Stop Micro Hybrid  
Heavy Loads  
DC-DC Converter  
Ordering Information  
Standard Pack  
Form  
Tube  
Complete Part Number  
Base part number Package Type  
Quantity  
75  
2000  
3000  
3000  
75  
AIRFR8401  
D-Pak  
AUIRFR8401  
AUIRFR8401TR  
AUIRFR8401TRL  
AUIRFR8401TRR  
AUIRFU8401  
Tape and Reel  
Tape and Reel Left  
Tape and Reel Right  
Tube  
AUIRFU8401  
I-Pak  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air condi-  
tions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
Max.  
100  
71  
100  
400  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
A
PD @TC = 25°C  
Maximum Power Dissipation   
Linear Derating Factor   
Gate-to-Source Voltage  
Operating Junction and  
79  
0.53  
± 20  
-55 to + 175  
W
W/°C  
V
VGS  
TJ  
TSTG  
°C  
Storage Temperature Range  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
1
www.irf.com  
© 2013 International Rectifier  
May 06, 2013  
1234567...14

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