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AUIRFU4105Z

更新时间： 2024-01-08 20:23:24
品牌 Logo 应用领域
科盛美 - KERSEMI 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
12页 4675K
描述
AUTOMOTIVE GRADE

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中文翻译

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AUIRFU4105Z 数据手册

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AUTOMOTIVE GRADE  
AUIRFR4105Z  
AUIRFU4105Z  
Features  
D
●
●
●
●
●
●
●
Advanced Process Technology  
V(BR)DSS  
55V  
24.5m  
30A  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
RDS(on) max.  
ID  
Ω
G
S
Automotive Qualified *  
Description  
D
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low on-  
resistance per silicon area. Additional features of this  
design are a 175°C junction operating temperature,  
fast switching speed and improved repetitive ava-  
lanche rating . These features combine to make this  
design an extremely efficient and reliable device for  
use in Automotive applications and a wide variety of  
other applications.  
S
S
D
G
G
D-Pak  
I-Pak  
AUIRFR4105Z  
AUIRFU4105Z  
G
Gate  
D
S
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
30  
Units  
A
I
I
I
@ T = 25°C  
C
D
D
@ T = 100°C  
C
21  
120  
48  
DM  
P
@T = 25°C  
Power Dissipation  
C
W
D
Linear Derating Factor  
0.32  
± 20  
W/°C  
V
V
GS  
Gate-to-Source Voltage  
EAS  
29  
mJ  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
EAS (tested )  
46  
IAR  
See Fig.12a, 12b, 15, 16  
A
EAR  
mJ  
Repetitive Avalanche Energy  
T
J
-55 to + 175  
Operating Junction and  
T
°C  
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Mounting Torque, 6-32 or M3 screw  
300  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
3.12  
50  
Units  
RθJC  
Junction-to-Case  
RθJA  
RθJA  
°C/W  
Junction-to-Ambient (PCB mount)  
Junction-to-Ambient  
110  
www.kersemi.com  
1
07/23/2010  
1234567...12

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