Datasheet > AOD510

AOD510

更新时间： 2024-09-14 17:15:47

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	488K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:70A;Vgs(th)(V):±20;漏源导通电阻:2.6mΩ@10V;漏源导通电阻:4mΩ@4.5V

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AOD510 数据手册

AOD510

UMW

30V N-Channel MOSFET

General Description

• Very Low RDS(on) at 4.5V_GS

• Low Gate Charge

• High Current Capability

• RoHS and Halogen-Free Compliant

Application

• DC/DC Converters in Computing, Servers, and POL

• Isolated DC/DC Converters in Telecom and Industri

Product Summary

•

V_DS(V) =30V

I_D=70A (V_GS= 10V)

R_DS(ON)<2.6mΩ (V _GS=10V)

R_DS(ON)<4mΩ (V _GS=4.5V)

•

100% UIS Tested

100% Rg Tested

Absolute Maximum Ratings T =25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

ate-

Sour

Voltage

V_GS

T_C=25°C

Continuous Drain

Current ^G

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

280

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_DSM

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_AS

E_AS

101

V_DSSpike

100ns

V_SPIKE

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^B

Power Dissipation ^A

7.5

P_DSM

°C

5.2

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

t ≤ 10s

R_θJA

Steady-State

R_θJC

1.9

2.5

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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