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AOD4120 PDF预览

AOD4120

更新时间: 2024-11-05 12:51:27
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
6页 460K
描述
N-Channel Enhancement Mode Field

AOD4120 数据手册

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AOD4120  
N-Channel Enhancement Mode Field  
Effect Transistor  
General Description  
The AOD4120 uses advanced trench technology and design to provide excellent RDS(ON) with low gate  
charge. This device is suitable for use in PWM, load switching and general purpose applications.  
Features  
VDS (V) = 20V  
ID = 25A (VGS = 10V)  
RDS(ON) <18 mΩ (VGS = 10V)  
RDS(ON) <25 mΩ (VGS = 4.5V)  
RDS(ON) <75 mΩ (VGS = 2.5V)  
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
20  
V
VGS  
Gate-Source Voltage  
±16  
25  
V
A
TC=25°C G  
TC=100°C  
Continuous Drain  
Current  
Pulsed Drain Current C  
Avalanche Current C  
ID  
19  
IDM  
IAR  
EAR  
75  
13  
A
Repetitive avalanche energy L=0.3mH C  
25  
mJ  
TC=25°C  
33  
PD  
W
Power Dissipation B  
TC=100°C  
16.7  
2.5  
TA=25°C  
PDSM  
W
Power Dissipation A  
TA=70°C  
1.7  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Case B  
Symbol  
Typ  
17  
Max  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
25  
50  
RθJA  
Steady-State  
Steady-State  
40  
RθJC  
3.6  
4.5  
1/6  
www.freescale.net.cn  

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