Datasheet > AOD4130

AOD4130

更新时间： 2024-11-06 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	310K
描述
60V N-Channel MOSFET

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中文翻译

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AOD4130 数据手册

AOD4130/AOI4130

60V N-Channel MOSFET

General Description

Product Summary

V_DS

60V

The AOD4130/AOI4130 combines advanced trench

MOSFET technology with a low resistance package to

provide extremely low R_DS(ON). This device is ideal for

boost converters and synchronous rectifiers for

consumer, telecom, industrial power supplies and LED

backlighting.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

30A

< 24mΩ

< 30mΩ

100% UIS Tested

100% R_gTested

TO252

DPAK

TO-251A

IPAK

Top View

TopView

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

6.5

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

I_AS, I_AR

E_AS, E_AR

36.5

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.5

P_DSM

°C

Power Dissipation ^A

1.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

12.4

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

2.4

2.9

Rev 1: June 2011

www.aosmd.com

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