Datasheet > AOD4132

AOD4132

更新时间： 2024-11-25 12:51:27

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飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	725K
描述
N-Channel Enhancement Mode Field

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AOD4132 数据手册

AOD4132

N-Channel Enhancement Mode Field

Effect Transistor

General Description

provide excellent R_DS(ON), low gate charge and low

The AOD4132 uses advanced trench technology to

gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion.

Features

V_DS(V) = 30V

I_D= 85A (V_GS= 10V)

R_DS(ON)< 4mΩ (V_GS= 10V)

R_DS(ON)< 6mΩ (V_GS= 4.5V)

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

T_C=25°C

T_C=100°C

Continuous Drain

Current ^B,G

I_D

Pulsed Drain Current

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_DM

I_AR

E_AR

200

112

100

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.5

P_DSM

°C

Power Dissipation ^A

1.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

14.2

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Case ^C

R_θJC

0.8

1.5

1/6

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