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AOD413A

更新时间: 2024-11-05 06:37:15
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
6页 157K
描述
P-Channel Enhancement Mode Field Effect Transistor

AOD413A 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:1.52Is Samacsys:N
配置:Single最大漏极电流 (Abs) (ID):12 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:175 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):50 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

AOD413A 数据手册

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AOD413A  
P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AOD413A uses advanced trench technology and  
design to provide excellent RDS(ON) with low gate  
charge. With the excellent thermal resistance of the  
DPAK package, this device is well suited for high  
current load applications.  
VDS (V) = -40V  
ID = -12A  
(VGS = -10V)  
RDS(ON) < 44m(VGS = -10V)  
RDS(ON) < 66m(VGS = -4.5V)  
100% UIS Tested!  
100% Rg Tested!  
-RoHS Compliant  
-Halogen Free*  
TO-252  
D-PAK  
D
Bottom View  
Top View  
D
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
VDS  
-40  
V
Gate-Source Voltage  
Continuous Drain  
Current B,H  
Pulsed Drain Current C  
Avalanche Current C  
VGS  
±20  
-12  
V
TC=25°C  
TC=100°C  
ID  
-9  
A
IDM  
IAR  
EAR  
-30  
-20  
Repetitive avalanche energy L=0.1mH C  
20  
mJ  
W
°C  
TC=25°C  
50  
PD  
Power Dissipation B  
TC=100°C  
25  
TA=25°C  
2.5  
PDSM  
Power Dissipation A  
1.6  
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 175  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
16.7  
40  
Max  
25  
50  
3
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A,G  
t 10s  
RθJA  
Maximum Junction-to-Ambient A,G  
Maximum Junction-to-Case F  
Steady-State  
Steady-State  
RθJC  
2
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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