Datasheet > AOD413A_11

AOD413A_11

更新时间： 2024-11-20 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	212K
描述
40V P-Channel MOSFET

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AOD413A_11 数据手册

AOD413A

40V P-Channel MOSFET

General Description

Features

The AOD413A uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. With the excellent thermal resistance of the

DPAK package, this device is well suited for high

current load applications.

V_DS(V) = -40V

I_D= -12A

(V_GS= -10V)

R_DS(ON)< 44mΩ (V_GS= -10V)

R_DS(ON)< 66mΩ (V_GS= -4.5V)

100% UIS Tested

100% Rg Tested

TO252

DPAK

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-40

Gate-Source Voltage

Continuous Drain

Current ^B,H

Pulsed Drain Current ^C

Avalanche Current ^C

V_GS

±20

-12

T_C=25°C

T_C=100°C

I_D

-12

I_DM

I_AR

E_AR

-30

-20

Repetitive avalanche energy L=0.1mH ^C

°C

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.5

P_DSM

Power Dissipation ^A

1.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

16.7

Max

Units

°C/W

Maximum Junction-to-Ambient ^A,G

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A,G

Maximum Junction-to-Case ^F

Steady-State

R_θJC

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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