AOD414

更新时间： 2024-11-20 12:24:51

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
6页	452K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AOD414 技术参数

生命周期：	Not Recommended	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.55
Is Samacsys：	N	Base Number Matches：	1

AOD414 数据手册

AOD414

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD414 uses advanced trench technology to

provide excellent R_DS(ON), shoot-through immunity

and body diode characteristics. This device is ideally

suited for use as a low side switch in CPU core

power conversion.

V_DS(V) = 30V

I_D= 85A (V_GS= 10V)

R_DS(ON)< 5.2mΩ (V_GS= 10V)

_DS(ON)< 7.0mΩ (V_GS= 4.5V)

100% UIS Tested!

100% Rg Tested!

-RoHS Compliant

-Halogen Free*

TO-252

D-PAK

Bottom View

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

T_C=25°C

T_C=100°C

Continuous Drain

Current ^B,G

I_D

Pulsed Drain Current

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_DM

I_AR

E_AR

200

140

100

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.5

P_DSM

°C

Power Dissipation ^A

1.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

14.2

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Case ^C

R_θJC

0.56

1.5

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

中文翻译

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