AOD4146

更新时间： 2024-11-18 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
7页	363K
描述
30V N-Channel MOSFET

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数据手册

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AOD4146 数据手册

AOD4146/AOI4146

30V N-Channel MOSFET

SDMOS ^TM

General Description

Product Summary

The AOD4146/AOI4146 is fabricated with SDMOS^TM

trench technology that combines excellent R_DS(ON)with low

gate charge.The result is outstanding efficiency with

controlled switching behavior. This universal technology is

well suited for PWM, load switching and general purpose

applications.

V_DS

30V

I_D(at V_GS=10V)

55A

_DS(ON)(at V_GS=10V)

< 5.6mΩ

< 9.5mΩ

R_DS(ON)(at V_GS= 4.5V)

100% UIS Tested

100% R_gTested

TO252

DPAK

TO-251A

IPAK

TopView

Bottom View

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

T_C=25°C

Continuous Drain

Current ^G

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

190

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.05mH ^C

I_DSM

I_AS, I_AR

E_AS, E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.5

P_DSM

°C

Power Dissipation ^A

1.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

2.4

Rev 1: June 2009

www.aosmd.com

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