AOD413YL

更新时间： 2024-09-15 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	117K
描述
P-Channel Enhancement Mode Field Effect Transistor

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中文翻译

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技术参数
数据手册

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AOD413YL 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

AOD413YL 数据手册

AOD413Y

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD413Y uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and low

gate resistance. With the excellent thermal resistance

of the DPAK package, this device is well suited for

high current load applications. Standard product

AOD413Y is Pb free, inside and out. It uses Pb-free

die attach and plating material(meets ROHS & Sony

259 specifications). AOD413YL is a Green Product

ordering option. AOD413Y and AOD413YL are

electrically identical.

V_DS(V) = -40V

I_D= -12A (V_GS= -10V)

R_DS(ON)< 45mΩ (V_GS= -10V)

R_DS(ON)< 69mΩ (V_GS= -4.5V)

TO-252

D-PAK

Top View

Drain Connected to

Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-40

V_GS

Gate-Source Voltage

Continuous Drain

Current ^B,G

±20

-12

T_A=25°C ^G

T_A=100°C ^G

I_D

-12

I_DM

I_AR

E_AR

Pulsed Drain Current

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

-30

-12

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.5

P_DSM

Power Dissipation ^A

T_A=70°C

1.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

16.7

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^C

Steady-State

R_θJL

2.5

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

中文翻译

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