Datasheet > AOD413A

AOD413A

更新时间： 2024-10-31 17:15:19

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	467K
描述
种类:P-Channel;漏源电压（Vdss）:-40V;持续漏极电流（Id）（在25°C时）:-12A;Vgs(th)(V):±20;漏源导通电阻:44mΩ@-10V

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AOD413A 数据手册

AOD413A

UMW

-40V P-Channel MOSFET

General Description

The AOD413A uses advanced technology and

design to provide excellent R_DS(ON)with low gate

charge. With the excellent thermal resistance of

the DPAK package, this device is well suited for

high current load applications.

Features

•

V_DS(V) =-40V

•

I_D=-12A (V_GS= 10V)

R_DS(ON)<44mΩ (V _GS=- 10V)

R_DS(ON)<66mΩ (V _GS=- 4.5V)

Absolute Maximum Ratings T =25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

-40

Gate-Source Voltage

Continuous Drain

Current ^B,H

Pulsed Drain Current ^C

Avalanche Current ^C

V_GS

±20

-12

T_C=25°C

T_C=100°C

I_D

-12

I_DM

I_AR

E_AR

-30

-20

Repetitive avalanche energy L=0.1mH ^C

°C

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.5

P_DSM

Power Dissipation ^A

1.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

16.7

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^D

Steady-State

R_θJC

2.5

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

中文翻译

下载PDF

与AOD413A相关器件

型号	品牌	获取价格	描述	数据表
AOD413A_11	AOS	获取价格	40V P-Channel MOSFET
AOD413AL	AOS	获取价格	Transistor
AOD413L	AOS	获取价格	P-Channel Enhancement Mode Field Effect Transistor
AOD413Y	AOS	获取价格	P-Channel Enhancement Mode Field Effect Transistor
AOD413YL	AOS	获取价格	P-Channel Enhancement Mode Field Effect Transistor
AOD414	AOS	获取价格	N-Channel Enhancement Mode Field Effect Transistor
AOD414	FREESCALE	获取价格	N-Channel 30-V (D-S) MOSFET White LED boost converters
AOD4140	AOS	获取价格	N-Channel SDMOSTM POWER Transistor
AOD4142	AOS	获取价格	N-Channel SDMOSTM POWER Transistor
AOD4144	AOS	获取价格	N-Channel SDMOSTM Power Transistor