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AOD4132_08 PDF预览

AOD4132_08

更新时间: 2024-11-05 12:51:35
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
6页 455K
描述
N-Channel Enhancement Mode Field Effect Transistor

AOD4132_08 数据手册

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AOD4132  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AOD4132 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and low  
gate resistance. This device is ideally suited for use  
as a low side switch in CPU core power conversion.  
VDS (V) = 30V  
ID = 85A (VGS = 10V)  
RDS(ON) < 4m(VGS = 10V)  
R
DS(ON) < 6m(VGS = 4.5V)  
-RoHS Compliant  
-Halogen Free*  
100% UIS Tested!  
100% Rg Tested!  
TO-252  
D-PAK  
D
Bottom View  
Top View  
D
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
VDS  
30  
±20  
85  
V
Gate-Source Voltage  
VGS  
V
A
G
TC=25°C  
TC=100°C  
Continuous Drain  
Current B,G  
B
ID  
63  
Pulsed Drain Current  
Avalanche Current C  
Repetitive avalanche energy L=0.1mH C  
IDM  
IAR  
EAR  
200  
30  
A
112  
100  
50  
mJ  
TC=25°C  
PD  
W
Power Dissipation B  
TC=100°C  
TA=25°C  
2.5  
PDSM  
W
°C  
Power Dissipation A  
1.6  
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 175  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
14.2  
39  
Max  
20  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Steady-State  
Steady-State  
50  
Maximum Junction-to-Case C  
RθJC  
0.8  
1.5  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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