AOD4136

更新时间： 2024-11-05 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
6页	156K
描述
N-Channel SDMOSTM POWER Transistor

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技术参数
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AOD4136 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.8
Is Samacsys：	N	Base Number Matches：	1

AOD4136 数据手册

AOD4136

N-Channel SDMOS^TMPOWER Transistor

General Description

Features

The AOD4136 is fabricated with SDMOS^TMtrench

technology that combines excellent R_DS(ON)with low

gate charge. The result is outstanding efficiency with

controlled switching behavior. This universal

technology is well suited for both DC-DC and load

switch applications.

V_DS(V) = 25V

I_D= 25A

(V_GS= 10V)

R_DS(ON)< 11mΩ (V_GS= 10V)

R_DS(ON)<19mΩ (V_GS= 4.5V)

100% UIS Tested!

100% Rg Tested!

-RoHS Compliant

-Halogen Free*

TO-252

D-PAK

Bottom View

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

Continuous Drain

Current ^B,H

Pulsed Drain Current ^C

Avalanche Current ^C

V_GS

±20

T_C=25°C

T_C=100°C

I_D

I_DM

I_AR

E_AR

100

Repetitive avalanche energy L=0.1mH ^C

°C

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.1

P_DSM

Power Dissipation ^A

1.3

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

17.4

Max

Units

°C/W

Maximum Junction-to-Ambient ^A,G

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A,G

Maximum Junction-to-Case ^F

Steady-State

R_θJC

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

中文翻译

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