Datasheet > AOD4122

AOD4122

更新时间： 2024-11-25 19:48:23

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	149K
描述
Transistor

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技术参数
数据手册

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AOD4122 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

AOD4122 数据手册

AOD4122

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD4122 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. This device is suitable for use in PWM, load

switching and general purpose applications.

Standard product AOD4122 is Pb-free (meets ROHS

& Sony 259 specifications).

V_DS(V) =30V

I_D= 12 A (VGS = 10V)

R_DS(ON)< 36 mΩ (V_GS= 10V)

R_DS(ON)< 63 mΩ (V_GS= 4.5V)

UIS Tested

Rg,Ciss,Coss,Crss Tested

TO-252

D-PAK

Top View

Drain Connected to

Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^G

±20

T_C=25°C

T_C=100°C

I_D

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy L=0.3mH ^C

I_DM

I_AR

E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

4.2

P_DSM

Power Dissipation ^A

T_A=70°C

2.7

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^B

Steady-State

R_θJC

4.5

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

中文翻译

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