Datasheet > AOD4120_08

AOD4120_08

更新时间： 2024-11-05 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
6页	179K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOD4120_08 数据手册

AOD4120

N-Channel Enhancement Mode Field Effect Transistor

1.4

General Description

Features

The AOD4120 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate

charge. This device is suitable for use in PWM, load

switching and general purpose applications.

V_DS(V) = 20V

I_D= 25A (VGS = 10V)

_DS(ON)<18 mΩ (V_GS= 10V)

_DS(ON)<25 mΩ (VGS = 4.5V)

_DS(ON)<75 mΩ (V_GS= 2.5V)

-RoHS Compliant

-Halogen Free*

193

100% UIS Tested!

100% Rg Tested!

TO-252

D-PAK

Bottom View

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

±16

V_GS

Gate-Source Voltage

T_C=25°C ^G

T_C=100°C

Continuous Drain

Current

Pulsed Drain Current ^C

Avalanche Current ^C

I_D

I_DM

I_AR

E_AR

Repetitive avalanche energy L=0.3mH ^C

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

16.7

2.5

T_A=25°C

P_DSM

Power Dissipation ^A

T_A=70°C

1.7

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^B

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJC

3.6

4.5

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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