Datasheet > AOD4128_08

AOD4128_08

更新时间： 2024-09-16 12:51:35

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
6页	149K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOD4128_08 数据手册

AOD4128

N-Channel Enhancement Mode Field Effect Transistor

General Description

The AOD4128 uses advanced trench technology to provide

Features

excellent R_DS(ON), low gate charge and low gate resistance.

This device is ideally suited for use as a low side switch in

CPU core power conversion. The device can also be used

in PWM, load switching and general purpose applications.

V_DS(V) = 25V

I_D= 60 A

(V_GS= 10V)

R_DS(ON)< 4 mΩ (V_GS= 10V)

_DS(ON)< 7 mΩ (V_GS= 4.5V)

-RoHS Compliant

-Halogen Free*

100% UIS Tested!

100% Rg Tested!

TO-252

D-PAK

Bottom View

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_C=25°C

Continuous Drain

Current^G

Pulsed Drain Current ^C

Avalanche Current ^C

T_C=100°C

I_D

I_DM

I_AR

E_AR

165

Repetitive avalanche energy L=0.3mH ^C

304

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.0

P_DSM

°C

Power Dissipation ^A

1.3

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

Steady State

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^B

R_θJC

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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