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AOD4128_08 PDF预览

AOD4128_08

更新时间: 2024-11-05 12:51:35
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
6页 149K
描述
N-Channel Enhancement Mode Field Effect Transistor

AOD4128_08 数据手册

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AOD4128  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
The AOD4128 uses advanced trench technology to provide  
Features  
excellent RDS(ON), low gate charge and low gate resistance.  
This device is ideally suited for use as a low side switch in  
CPU core power conversion. The device can also be used  
in PWM, load switching and general purpose applications.  
VDS (V) = 25V  
ID = 60 A  
(VGS = 10V)  
RDS(ON) < 4 m(VGS = 10V)  
R
DS(ON) < 7 m(VGS = 4.5V)  
-RoHS Compliant  
-Halogen Free*  
100% UIS Tested!  
100% Rg Tested!  
TO-252  
D-PAK  
D
Bottom View  
Top View  
D
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
25  
V
V
Gate-Source Voltage  
VGS  
±20  
60  
TC=25°C  
Continuous Drain  
CurrentG  
Pulsed Drain Current C  
Avalanche Current C  
TC=100°C  
ID  
47  
A
IDM  
IAR  
EAR  
165  
45  
Repetitive avalanche energy L=0.3mH C  
304  
75  
mJ  
W
TC=25°C  
PD  
Power Dissipation B  
TC=100°C  
37  
TA=25°C  
2.0  
PDSM  
W
°C  
Power Dissipation A  
1.3  
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 175  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
Max  
25  
60  
2
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
18  
50  
1
t 10s  
Steady State  
Steady State  
RθJA  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Case B  
RθJC  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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