AOD412L

更新时间： 2024-11-21 03:18:55

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	116K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOD412L 数据手册

AOD412

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD412 uses advanced trench technology to

provide excellent R_DS(ON), low gate chargeand low

gate resistance. This device is ideally suited for use

as a high side switch in CPU core power conversion.

Standard Product AOD412 is Pb-free (meets ROHS

& Sony 259 specifications). AOD412L is a Green

Product ordering option. AOD412 and AOD412L are

electrically identical.

V_DS(V) = 30V

I_D= 85A (V_GS= 10V)

_DS(ON)< 7.0mΩ (V_GS= 10V)

_DS(ON)< 10.5mΩ (V_GS= 4.5V)

TO-252

D-PAK

Top View

Drain Connected

to Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^B,G

±20

T_C=25°C ^G

T_C=100°C ^B

I_D

I_DM

I_AR

E_AR

Pulsed Drain Current

Avalanche Current ^C

200

Repetitive avalanche energy L=0.1mH ^C

120

100

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.5

P_DSM

Power Dissipation ^A

T_A=70°C

1.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

14.2

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJL

0.8

1.5

Alpha & Omega Semiconductor, Ltd.

12 3 4 5

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