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AOD413

更新时间: 2024-11-05 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
5页 119K
描述
P-Channel Enhancement Mode Field Effect Transistor

AOD413 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.57配置:Single
最大漏极电流 (Abs) (ID):12 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):50 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

AOD413 数据手册

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AOD413  
P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AOD413 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and low  
gate resistance. With the excellent thermal resistance  
of the DPAK package, this device is well suited for  
high current load applications. Standard Product  
AOD413 is Pb-free (meets ROHS & Sony 259  
specifications). AOD413L is a Green Product  
ordering option. AOD413 and AOD413L are  
electrically identical.  
VDS (V) = -40V  
ID = -12A (VGS = -10V)  
RDS(ON) < 45m(VGS = -10V)  
RDS(ON) < 69m(VGS = -4.5V)  
TO-252  
D-PAK  
D
Top View  
Drain Connected to  
Tab  
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
-40  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current B,G  
±20  
-12  
V
A
TA=25°C G  
TA=100°C G  
ID  
-12  
IDM  
IAR  
EAR  
Pulsed Drain Current  
Avalanche Current C  
Repetitive avalanche energy L=0.1mH C  
-30  
-12  
A
30  
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
50  
PD  
W
25  
TA=25°C  
2.5  
PDSM  
W
Power Dissipation A  
TA=70°C  
1.6  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
16.7  
40  
Max  
25  
50  
3
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Case C  
Steady-State  
Steady-State  
RθJL  
2.5  
Alpha & Omega Semiconductor, Ltd.  

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