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AOD4124

更新时间: 2024-11-05 12:51:35
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
7页 268K
描述
100V N-Channel MOSFET

AOD4124 技术参数

生命周期:Obsolete包装说明:DPAK-3/2
Reach Compliance Code:compliant风险等级:5.79

AOD4124 数据手册

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AOD4124  
100V N-Channel MOSFET  
SDMOSTM  
General Description  
Product Summary  
The AOD4124 is fabricated with SDMOSTM trench  
technology that combines excellent RDS(ON) with low gate  
charge and low Qrr.The result is outstanding efficiency  
with controlled switching behavior. This universal  
technology is well suited for PWM, load switching and  
general purpose applications.  
VDS  
100V  
54A  
ID (at VGS=10V)  
< 21mΩ  
< 25mΩ  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS = 7V)  
100% UIS Tested  
100% Rg Tested  
TO252  
DPAK  
D
Top View  
Bottom View  
D
D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
100  
Units  
Drain-Source Voltage  
V
VGS  
ID  
IDM  
IDSM  
±25  
Gate-Source Voltage  
Continuous Drain  
CurrentG  
V
A
TC=25°C  
54  
TC=100°C  
38  
Pulsed Drain Current C  
130  
TA=25°C  
TA=70°C  
7.5  
Continuous Drain  
Current  
Avalanche Current C  
Avalanche energy L=0.1mH C  
A
6
IAS, IAR  
35  
A
EAS, EAR  
60  
mJ  
TC=25°C  
150  
PD  
W
Power Dissipation B  
Power Dissipation A  
TC=100°C  
TA=25°C  
TA=70°C  
75  
3.1  
PDSM  
W
2
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
12  
Max  
15  
40  
1
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
33  
Steady-State  
Steady-State  
RθJC  
0.8  
Rev0: May 2010  
www.aosmd.com  
Page 1 of 7  

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