Datasheet > AOD4130

AOD4130

更新时间： 2024-11-06 17:15:39

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	433K
描述
种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时）:30A;Vgs(th)(V):±20;漏源导通电阻:24mΩ@10V

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AOD4130 数据手册

UMW

AOD4130

60V N-Channel MOSFET

General Description

The AOD4130 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). This device is ideal for boost

converters and synchronous rectifiers for consumer,

telecom, industrial power supplies and LED

backlighting.

General Features

V_DS

60V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

30A

< 24mΩ

< 30mΩ

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

±20

Gate-Source Voltage

V_GS

T_C=25°C

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

T_A=25°C

T_A=70°C

6.5

Continuous Drain

Current

I_DSM

Avalanche Current ^C

I_AS, I_AR

Avalanche energy L=0.1mH ^C

E_AS, E_AR

36.5

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.5

P_DSM

°C

Power Dissipation ^A

1.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

12.4

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

2.4

2.9

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UTD Semiconductor Co.,Limited

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