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AOD4128

更新时间: 2024-11-06 06:37:15
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
5页 119K
描述
N-Channel Enhancement Mode Field Effect Transistor

AOD4128 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.56
Base Number Matches:1

AOD4128 数据手册

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AOD4128  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
The AOD4128 uses advanced trench technology to provide  
Features  
excellent RDS(ON), low gate charge and low gate resistance.  
This device is ideally suited for use as a low side switch in  
CPU core power conversion. The device can also be used  
in PWM, load switching and general purpose applications.  
Standard Product AOD412 8 is Pb-free (meets ROHS &  
Sony 259 specifications).  
VDS (V) = 25V  
ID = 60 A  
(VGS = 10V)  
RDS(ON) < 4 m(VGS = 10V)  
RDS(ON) < 7 m(VGS = 4.5V)  
TO-252  
D-PAK  
D
Top View  
Drain Connected to  
Tab  
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
25  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
CurrentG  
Pulsed Drain Current C  
Avalanche Current C  
±20  
60  
V
TC=25°C  
TC=100°C  
ID  
60  
A
IDM  
IAR  
EAR  
165  
45  
Repetitive avalanche energy L=0.3mH C  
mJ  
W
304  
75  
TC=25°C  
PD  
Power Dissipation B  
TC=100°C  
37  
TA=25°C  
2.0  
PDSM  
W
Power Dissipation A  
TA=70°C  
1.3  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
Max  
25  
60  
2
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Case B  
t 10s  
Steady State  
Steady State  
18  
50  
1
RθJA  
RθJC  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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