Datasheet > AOD410L

AOD410L

更新时间： 2024-11-04 21:55:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	117K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AOD410L 数据手册

Rev3: Nov 2004

AOD410, AOD410L ( Green Product )

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD410 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. This

device is suitable for use as a load switch or in PWM

applications. AOD410L( Green Product ) is offered in

a lead-free package.

V_DS(V) = 30V

I_D= 8A

R_DS(ON)< 65mΩ (V_GS= 10V)

R_DS(ON)< 105mΩ (V_GS= 4.5V)

TO-252

D-PAK

Top View

Drain Connected to

Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^G

Pulsed Drain Current ^B

Avalanche Current ^C

±20

T_C=25°C

T_C=100°C

I_D

I_DM

I_AR

E_AR

Repetitive avalanche energy L=0.1mH ^C

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

12.5

2.1

T_A=25°C

P_DSM

Power Dissipation ^A

T_A=70°C

1.33

-55 to 175

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^C

Steady-State

R_θJL

5.3

Alpha & Omega Semiconductor, Ltd.

12 3 4

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