Datasheet > AOD4110

AOD4110

更新时间： 2024-11-05 03:18:55

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	118K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
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AOD4110 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.81
Base Number Matches：	1

AOD4110 数据手册

AOD4110

N-Channel Enhancement Mode Field Effect Transistor

SRFET

General Description

Features

The AOD4110 uses advanced trench technology with

a monolithically integrated Schottky diode to provide

excellent R_DS(ON),and low gate charge. This device is

suitable for use as a low side FET in SMPS, load

switching and general purpose applications. Standard

Product AOD4110 is Pb-free (meets ROHS & Sony

259 specifications).

V_DS(V) = 30V

I_D=40A (V_GS= 10V)

R_DS(ON)< 7.2mΩ

(V_GS= 10V)

R_DS(ON)< 10.5mΩ (V_GS= 4.5V)

UIS Tested!

Rg,Ciss,Coss,Crss Tested

TO-252 D-PAK

SRFET ^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

Top View

Drain Connected to

Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

±20

T_C=25°C ^G

T_C=100°C ^G

Continuous Drain

Current ^B

I_D

Pulsed Drain Current ^C

Continuous Drain

Current^A

I_DM

180

T_A=25°C

T_A=70°C

I_DSM

I_AR

Avalanche Current ^C

Repetitive avalanche energy L=0.3mH ^C

E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

P_DSM

Power Dissipation ^A

T_A=70°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^D

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

R_θJC

2.4

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

中文翻译

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