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AOD4120

更新时间: 2024-11-06 03:18:55
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
5页 128K
描述
N-Channel Enhancement Mode Field Effect Transistor

AOD4120 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.8
Base Number Matches:1

AOD4120 数据手册

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AOD4120  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AOD4120 uses advanced trench technology and  
design to provide excellent RDS(ON) with low gate  
charge. This device is suitable for use in PWM, load  
switching and general purpose applications. Standard  
product AOD4120 is Pb-free (meets ROHS & Sony  
259 specifications). AOD4120L is a Green Product  
ordering option. AOD4120 and AOD4120L are  
electrically identical.  
VDS (V) = 20V  
ID = 25A (VGS = 10V)  
R
DS(ON) <18 m(VGS = 10V)  
RDS(ON) <25 m(VGS = 4.5V)  
RDS(ON) <75 m(VGS = 2.5V)  
UIS Tested  
Rg,Ciss,Coss,Crss Tested  
TO-252  
D-PAK  
D
Top View  
Drain Connected to  
Tab  
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
20  
V
VGS  
Gate-Source Voltage  
±16  
25  
V
A
TC=25°C G  
TC=100°C  
Continuous Drain  
Current  
Pulsed Drain Current C  
Avalanche Current C  
ID  
23  
IDM  
IAR  
EAR  
75  
13  
A
Repetitive avalanche energy L=0.3mH C  
25  
mJ  
TC=25°C  
33  
PD  
W
Power Dissipation B  
TC=100°C  
16.7  
2.5  
TA=25°C  
PDSM  
W
Power Dissipation A  
TA=70°C  
1.7  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 175  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
17  
Max  
25  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Case B  
40  
50  
Steady-State  
Steady-State  
RθJC  
3.6  
4.5  
Alpha & Omega Semiconductor, Ltd.  

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