Datasheet > AO8814

AO8814

更新时间： 2024-11-24 18:09:55

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
5页	710K
描述
TSSOP-8

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中文翻译

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数据手册

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AO8814 数据手册

AO8814

DUAL N-CHANNEL ENHANCEMENT MODE FET

FEATURES

 Ultra low on-resistance:V_DS=20V,I_D=7.5A,R_DS(ON)≤16mΩ@V_GS=10V

 Low gate charge

 ESD protected

 Surface Mount device

TSSOP-8

MECHANICAL DATA



Case: TSSOP-8

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: not available

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Value

±12

Unit

V_GS

T_A= 25°C

T_A= 70°C

7.5

Continuous drain current

I_D

Pulsed drain current

I_DM

P_D

T_A= 25°C

T_A= 70°C

1.5

Power dissipation

0.96

120

Thermal resistance from Junction to ambient

Thermal resistance from Junction to Lead

Junction temperature

R_θ

°C/W

°C

R_θ

T_J

T_STG

150

-55 ~+150

Storage temperature

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

V^(BR)DSS*

Min

Typ

Max

Unit

Conditions

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

Gate-Source Breakdown Voltage

On-State Drain Current

V =0V, I =250μA

I_DSS

I_GSS

±10

μA V_DS=16V,

V^GS=0V

μA V_DS=0V,

mΩ

VGS=±10V

V_GS(th)

0.5

±12

11.5

0.71

V =V , I =250μA

BV_GSO

I_D(ON)

VDS=0V, IG=±250μA

VGS=4.5V

V^GS=10V, I^D=7.5A

VGS=10V, ID=7.5A,TJ=125°C

V^GS=4.5V, I^D=7A

V^GS=3.6V, I^D=6A

VGS=2.5V, ID=6A

V^GS=1.8V, I^D=5A

V^DS=5V, I^D=7A

V_DS=5V,

16.8

Drain-source on-resistance

R_DS(ON)*

Forward transconductance

Diode forward voltage

Diode forward current

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate resistance

Total gate charge

Gate-source charge

Gate-drain charge

Turn-on delay time

g_FS

V_SD

I_S

C_iss

C_oss

C_rss

R_g

0.74

2.5

IS=1A, VGS=0V

1390

190

150

1.5

15.4

1.4

V_{DS=10V, VGS=0V, f=1MHz}

V_{DS=0V, V =0V, f=1MHz}

Q_g

VGS=4.5V,VDS=10V,ID=7.5A

Q_gs

Q_gd

t_d(on)

t_r

6.2

VGS=4.5V, VDS=10V,

Turn-on rise time

t_d(off)

t_f

RGEN=3Ω,RL=1.3Ω

Turn-off delay time

Turn-off fall time

40.5

t_rr

Q_rr

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

5.1

I =7.5A, dI/dt=100A/ s

I^F=7.5A, dI/dt=100A/ s

*Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% .

1 / 5

E-mail:hkt@heketai.com

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与AO8814相关器件

型号	品牌	获取价格	描述	数据表
AO8814_10	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8814L	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8816	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8816	HOTTECH	获取价格	TSSOP-8
AO8816L	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8818	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8818	HOTTECH	获取价格	TSSOP-8
AO8818_08	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8818L	AOS	获取价格	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8820	FREESCALE	获取价格	20V Common-Drain Dual N-Channel Mosfet

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