Datasheet > AO8814_10

AO8814_10

更新时间： 2024-10-30 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	422K
描述
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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AO8814_10 数据手册

AO8814

Common-Drain Dual N-Channel Enhancement Mode Field

Effect Transistor

General Description

Features

The AO8814 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V while

retaining a 12V V_GS(MAX)rating. It is ESD protected.

This device is suitable for use as a uni-directional or

bi-directional load switch, facilitated by its common-

drain configuration.

V_DS(V) = 20V

I_D= 7.5 A (V_GS= 10V)

R_DS(ON)< 16mΩ (V_GS= 10V)

_DS(ON)< 18mΩ (V_GS= 4.5V)

R_DS(ON)< 20mΩ (V_GS= 3.6V)

R_DS(ON)< 24mΩ (V_GS= 2.5V)

_DS(ON)< 34mΩ (V_GS= 1.8V)

ESD Rating: 2500V HBM

TSSOP-8

Top View

D1/D2

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±12

7.5

T_A=25°C

T_A=70°C

Continuous Drain

Current ^A

I_D

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

1.5

P_D

°C

Power Dissipation ^A

0.96

-55 to 150

Junction and Storage Temperature Range

T_J, T_STG

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Steady-State

120

Maximum Junction-to-Lead ^C

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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