Datasheet > AO7417_13

AO7417_13

更新时间： 2024-09-15 12:54:07

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
4页	1730K
描述
20V P-Channel MOSFET

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数据手册

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AO7417_13 数据手册

万和兴电子有限公司 www.whxpcb.com

AO7417

20V P-Channel MOSFET

General Description

Product Summary

V_DS

The AO7417 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 1.5V, in the small SOT363 footprint.

This device is suitable for use in buck convertor.

-20V

I_D(at V_GS=-4.5V)

R_DS(ON)(at V_GS=-4.5V)

R_DS(ON)(at V_GS=-2.5V)

R_DS(ON)(at V_GS=-1.8V)

R_DS(ON)(at V_GS=-1.5V)

-2A

< 80mΩ

< 100mΩ

< 125mΩ

< 150mΩ

SC-70-6

(SOT-323)

Top View

Bottom View

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

10 Sec

Steady State

Units

Drain-Source Voltage

Gate-Source Voltage

-20

±8

V_GS

T_A=25°C

T_A=70°C

-2

-1.9

-1.6

Continuous Drain

Current ^A

I_D

-1.7

Pulsed Drain Current ^B

I_DM

P_D

-20

T_A=25°C

T_A=70°C

0.63

0.4

0.57

0.36

°C

Power Dissipation ^A

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

160

180

130

Max

200

220

160

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

≤ 10s

R_θJA

Steady-State

R_θJL

Rev.1. 0: March 2013

www.aosmd.com

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