Datasheet > AO7600

AO7600

更新时间： 2024-11-17 21:55:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	140K
描述
Complementary Enhancement Mode Field Effect Transistor

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AO7600 数据手册

AO7600

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

n-channel

V_DS(V) = 20V

I_D= 0.9A (V_GS=4.5V)

The AO7600 uses advanced trench

technology MOSFETs to provide excellent

R_DS(ON)and low gate charge. The

complementary MOSFETs may be used

to form a level shifted high side switch, an

inverter, and for a host of other

applications. Both devices are ESD

protected. Standard Product AO7600 is

Pb-free (meets ROHS & Sony 259

specifications). AO7600L is a Green

Product ordering option. AO7600 and

AO7600L are electrically identical.

p-channel

-20V

-0.6A (V_GS=-4.5V)

R_DS(ON)

< 300mΩ (V_GS=4.5V)

< 350mΩ (V_GS=2.5V)

< 450mΩ (V_GS=1.8V)

< 550mΩ (V_GS=-4.5V)

< 700mΩ (V_GS=-2.5V)

< 950mΩ (V_GS=-1.8V)

SC-70-6

(SOT-323)

Top View

n-channel

p-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

±8

-20

±8

V_GS

T_A=25°C

T_A=70°C

0.9

-0.6

Continuous Drain

Current ^A

Pulsed Drain Current ^B

I_D

0.7

-0.48

-3

I_DM

T_A=25°C

T_A=70°C

0.3

P_D

Power Dissipation

0.19

-55 to 150

0.19

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics: n-channel and p-channel

Parameter

Symbol

Device

Typ

360

400

300

360

400

300

Max Units

415 °C/W

460 °C/W

350 °C/W

415 °C/W

460 °C/W

350 °C/W

Maximum Junction-to-Ambient ^A

n-ch

p-ch

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

R_θJA

R_θJL

Maximum Junction-to-Ambient ^A

t ≤ 10s

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7

中文翻译

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